Microelectronics Journal, Volume 37

Volume 37, Number 1, January 2006

• 
  Mnawer Souissi, Zied Chine, A. Bchetnia, H. Touati, Belgacem El Jani:
  Photoluminescence of V-doped GaN thin films grown by MOVPE technique. 1-4
• 
  Cheng Luo, Fang Meng, Xinchuan Liu, Yiyun Guo:
  Reinforcement of a PDMS master using an oxide-coated silicon plate. 5-11
• 
  H. Rodríguez-Coppola, Joaquín Tutor-Sánchez, Victor R. Velasco:
  Optical properties of (001) GaN/AlN quantum wells. 12-18
• 
  Oleg Maksimov, Martin Muñoz, M. C. Tamargo:
  Luminescent properties of Be_xCd_1-xSe thin films. 19-21
• 
  S. Kal, Soumen K. Das, D. K. Maurya, Kanishka Biswas, Adepu Ravi Sankar, S. K. Lahiri:
  CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity. 22-30
• 
  Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre:
  Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. 31-37
• 
  Yuan Tian, Hong Wang:
  Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base. 38-43
• 
  Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi:
  High quality silicon nitride deposited by Ar/N₂/H₂/SiH₄ high-density and low energy plasma at low temperature. 44-49
• 
  Xiaodong Wang, Baoqing Li, Onofrio L. Russo, Harry T. Roman, Ken K. Chin, Kenneth R. Farmer:
  Diaphragm design guidelines and an optical pressure sensor based on MEMS technique. 50-56
• 
  Ali Rostami, Ali Rahmani:
  Two-dimensional optical mask design and atom lithography. 57-63
• 
  Anna Maria Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, Frank Hamelmann, Ulrich Heinzmann:
  Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. 64-70
• 
  Ali Telli, Simsek Demir, Murat Askar:
  CMOS planar spiral inductor modeling and low noise amplifier design. 71-78
• 
  H. S. Ashour, A. I. Ass'ad, M. M. Shabat, Majdi S. Hamada:
  Electronic conductance in binomially tailored quantum wire. 79-83
• 
  Jinguang Jiang, Yaonan Wang:
  Design of a tunable frequency CMOS fully differential fourth-order Chebyshev filter. 84-90

Volume 37, Number 2, February 2006

• 
  G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, Marián Veselý, P. C. Euthymiou:
  Temperature dependence of Si-GaAs energy gap using photoconductivity spectra. 91-93
• 
  George T. Zardalidis, Ioannis Karafyllidis:
  Design and simulation of a nanoelectronic single-electron Control - Not gate. 94-97
• 
  Myoung-Seok Kim, Young-Don Ko, Tae-Houng Moon, Jae-Min Myoung, Ilgu Yun:
  Modeling growth rate of HfO₂ thin films grown by metal-organic molecular beam epitaxy. 98-106
• 
  Z. W. Zhong, K. S. Goh:
  Investigation of ultrasonic vibrations of wire-bonding capillaries. 107-113
• 
  M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
  Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. 114-120
• 
  Xiqiu Fan, Honghai Zhang, Sheng Liu, Xiaofeng Hu, Ke Jia:
  NIL - a low-cost and high-throughput MEMS fabrication method compatible with IC manufacturing technology. 121-126
• 
  M. Idrissi-Benzohra, M. Abdelaoui, M. Benzohra:
  Effect of a magnetic field on the conduction mechanism in Silicon P⁺N junctions. 127-132
• 
  Benoît Torbiéro, Marie-Laure Pourciel-Gouzy, Iryna Humenyuk, Jean-Baptiste Doucet, Augustin Martinez, Pierre Temple-Boyer:
  Mass patterning of polysiloxane layers using spin coating and photolithography techniques. 133-136
• 
  Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre:
  Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. 137-144
• 
  Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka:
  Thermal characterisation of power devices during transient operation. 145-151
• 
  Juliano Fujioka Mologni, Marco Antonio Robert Alves, Edmundo S. Braga:
  Numerical study on performance of pyramidal and conical isotropic etched single emitters. 152-157
• 
  Ahmed Rebey, W. Fathallah, B. El Jani:
  In depth study of the compensation in annealed heavily carbon doped GaAs. 158-166
• 
  Seong-Chan Bae, Sie-Young Choi:
  Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode. 167-173
• 
  Józef Kalisz, Zbigniew Jachna:
  Metastability tests of flip-flops in programmable digital circuits. 174-180
• 
  H. Souffi-Kebbati, Jean-Philippe Blonde, Francis Braun:
  A new semi-flat architecture for high speed and reduced area CORDIC chip. 181-187

Volume 37, Number 3, March 2006

7th International Seminar on Power Semiconductor - 7th International Seminar on Power Semiconductor

• 
  Vitezslav Benda:
  The quest for optimum construction and technology of power semiconductor devices. 189
• 
  Federica Cappelluti, Fabrizio Bonani, Mauro Furno, Giovanni Ghione, R. Carta, L. Bellemo, C. Bocchiola, Luigi Merlin:
  Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes. 190-196
• 
  Pavel Hazdra, V. Komarnitskyy:
  Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage. 197-203
• 
  Ralf Siemieniec, Hans-Joachim Schulze, Franz-Josef Niedernostheide, W. Südkamp, Josef Lutz:
  Compensation and doping effects in heavily helium-radiated silicon for power device applications. 204-212
• 
  M. Cerník:
  Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion. 213-216
• 
  Vitezslav Benda, M. Cerník, Václav Papez:
  OCVD carrier lifetime in P⁺NN⁺ diode structures with axial carrier lifetime gradient. 217-222
• 
  A. Bourennane, Marie Breil, Jean-Louis Sanchez, J. Jalade:
  A vertical monolithical MOS thyristor bi-directional device. 223-230
• 
  In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Yearn-Ik Choi, Min-Koo Han:
  A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base. 231-235
• 
  J. Vobecký, D. Kolesnikov:
  The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices. 236-242
• 
  Martin Knaipp, Jong Mun Park, Verena Vescoli:
  Evolution of a CMOS Based Lateral High Voltage Technology Concept. 243-248
• 
  C. Caramel, P. Austin, Jean-Louis Sanchez, E. Imbernon, Marie Breil:
  Integrated IGBT short-circuit protection structure: Design and optimization. 249-256
• 
  Isabelle Bertrand, Jean-Marie Dilhac, Philippe Renaud, Christian Ganibal:
  Large area recrystallization of thick polysilicon films for low cost partial SOI power devices. 257-261
• 
  Masayasu Ishiko, Masanori Usui, Takashi Ohuchi, Mikio Shirai:
  Design concept for wire-bonding reliability improvement by optimizing position in power devices. 262-268
• 
  B. Kojecký, Václav Papez, D. Sámal:
  Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices. 269-274

Volume 37, Number 4, April 2006

• 
  Hassan Hassan, Mohab Anis, Mohamed I. Elmasry:
  Impact of technology scaling and process variations on RF CMOS devices. 275-282
• 
  L. Harmatha, Milan Tapajna, V. Slugen, P. Ballo, P. Písecný, J. Sik, G. Kögel:
  Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. 283-289
• 
  Mariana Pelissari Monteiro Aguiar Baroni, Reinaldo R. Rosa, A. Ferreira da Silva, I. Pepe, Lucimara Stolz Roman, F. M. Ramos, Rajeev Ahuja, C. Persson, E. Veje:
  Modeling and gradient pattern analysis of irregular SFM structures of porous silicon. 290-294
• 
  Z. W. Zhong, Z. F. Wang, Y. H. Tan:
  Chemical mechanical polishing of polymeric materials for MEMS applications. 295-301
• 
  S. Eliahou-Niv, R. Dahan, Gady Golan:
  Design and analysis of a novel tunable optical filter. 302-307
• 
  Marc Bigas, Enric Cabruja:
  Characterisation of electroplated Sn/Ag solder bumps. 308-316
• 
  Ling Li, Shibing Long, Congshun Wang, Wengang Wu, Yilong Hao, Ming Liu:
  Modeling and simulation development of electron beam resist based on cellular automata. 317-320
• 
  Kanishka Biswas, Soumen K. Das, D. K. Maurya, S. Kal, S. K. Lahiri:
  Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface. 321-327
• 
  Y. D. Jhou, C. H. Chen, Shoou-Jinn Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, C. L. Yu, S. M. Wang, M. H. Wu:
  GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes. 328-331
• 
  L. Sun, D. Y. Li, X. Y. Liu, R. Q. Han:
  Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique. 332-335
• 
  C. Touzi, F. Omnès, Tarek Boufaden, P. Gibart, B. El Jani:
  Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response. 336-339
• 
  Tomasz Zawada:
  Simultaneous estimation of heat transfer coefficient and thermal conductivity with application to microelectronic materials. 340-352
• 
  Parag K. Lala, B. Kiran Kumar, James Patrick Parkerson:
  On self-healing digital system design. 353-362
• 
  Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger:
  Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. 363-370
• 
  Raúl Quintero, A. Cerdeira:
  Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices. 371-382

Volume 37, Number 5, May 2006

• 
  Zunxian Yang, Xinxin Li:
  Simulation and optimization on the squeeze-film damping of a novel high-g accelerometer. 383-387
• 
  Abdellatif Bouzidi, Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig:
  Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si_0.8Ge_0.2 multilayer solar cell. 388-394
• 
  Volodymyr Grimalsky, Edmundo Gutiérrez, Abel García, Svetlana V. Koshevaya:
  Resonant excitation of microwave acoustic modes in n-GaAs film. 395-403
• 
  Weihua Liu, Changchun Zhu, Cao Meng, Fanguang Zeng:
  On the uniformity of field emission in screen printed CNT-cathodes: The effects of the cathode roughness. 404-408
• 
  Paolo Cova, Roberto Menozzi, Marco Portesine:
  Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design. 409-416
• 
  Kuan-Ting Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi:
  Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN. 417-420
• 
  Bruno Bêche, N. Pelletier, Etienne Gaviot, R. Hierle, Antoine Goullet, Jean-Pierre Landesman, J. Zyss:
  Conception of optical integrated circuits on polymers. 421-427
• 
  C. W. Huang, S. J. Chang, W. Wu, C. L. Wu, C. S. Chang:
  A Ku band four-stage PHEMT 1W MMIC power amplifier. 428-432
• 
  Marc Bigas, Enric Cabruja, Josep Forest, Joaquim Salvi:
  Review of CMOS image sensors. 433-451
• 
  Satyabrata Jit, Neti V. L. Narasimha Murty:
  Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs. 452-458
• 
  Gady Golan, Alex Axelevitch:
  Progress in vacuum photothermal processing (VPP). 459-473

Volume 37, Number 6, June 2006

• 
  Iryna Humenyuk, Benoît Torbiéro, S. Assié-Souleille, David Colin, Xavier Dollat, Bernard Franc, Augustin Martinez, Pierre Temple-Boyer:
  Development of pNH₄-isfets microsensors for water analysis. 475-479
• 
  Hariyadi Soetedjo, O. Mohd Nizam, Idris Sabtu, J. Mohd Sazli, Ashaari Yusof, Y. Mohd Razman, A. F. Awang Mat:
  Current-voltage behavior of AlGaAs/InGaAs pHEMT structures and the effect of optical illumination. 480-482
• 
  Daniel Hasko, Jaroslav Kovác, F. Uherek, Jaroslava Skriniarová, J. Jakabovic, L. Peternai:
  Avalanche photodiode with sectional InGaAsP/InP charge layer. 483-486
• 
  Loránt Peternai, Jaroslav Kovác, Gert Irmer, Stanislav Hasenöhrl, Jozef Novák, Rudolf Srnánek:
  Investigation of graded In_xGa_1-xP buffer by Raman scattering method. 487-490
• 
  H. Dakhlaoui, S. Jaziri:
  Spin polarization in multilayer ferromagnetic semiconductor. 491-494
• 
  Fanguang Zeng, Chang-Chun Zhu, Weihua Liu, Xinghui Liu:
  The fabrication and operation of fully printed Carbon nanotube field emission displays. 495-499
• 
  N. G. Shankar, Z. W. Zhong:
  A rule-based computing approach for the segmentation of semiconductor defects. 500-509
• 
  Janaina Gonçalves Guimarães, L. M. Nóbrega, José Camargo da Costa:
  Design of a Hamming neural network based on single-electron tunneling devices. 510-518
• 
  Kanishka Biswas, S. Kal:
  Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon. 519-525
• 
  Oleg Semenov, Hossein Sarbishaei, Valery Axelrad, Manoj Sachdev:
  Novel gate and substrate triggering techniques for deep sub-micron ESD protection devices. 526-533
• 
  Yanli Zhao:
  Experimental investigation on nonlinearities of PIN photodiodes. 534-536
• 
  Deepanjan Datta, A. Ananda Prasad Sarab, Sudeb Dasgupta:
  Two-dimensional numerical modeling of lightly doped nano-scale double-gate MOSFET. 537-545
• 
  Marin Nedelchev, Dobri Dobrev:
  Low sensitivity symmetrical response microwave filters. 546-553
• 
  Michalis D. Galanis, Athanasios Milidonis, Athanasios Kakarountas, Costas E. Goutis:
  A design flow for speeding-up dsp applications in heterogeneous reconfigurable systems. 554-564

Volume 37, Number 7, July 2006

• 
  Chao-Ming Lin, Win-Jin Chang, Te-Hua Fang:
  Reliability analysis of the fine pitch connection using anisotropic conductive film (ACF). 565-568
• 
  Fei Zhang, Lina Shi, Wen Yu, Chengfang Li, Xiaowei Sun:
  Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT. 569-573
• 
  Wanjun Chen, Bo Zhang, Zhaoji Li:
  A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC. 574-578
• 
  Hasina F. Huq, Syed K. Islam:
  AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application. 579-582
• 
  Junxue Ran, Xiaoliang Wang, Guoxin Hu, Junxi Wang, Jianping Li, Cuimei Wang, Yiping Zeng, Jinmin Li:
  Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD. 583-585
• 
  L. Bouzrara, R. Ajjel, H. Mejri, M. A. Zaïdi, Hichem Maaref:
  Alloy splitting of Te-DX in Al_xGa_1-xAs analysis using the deep level transient spectroscopy technique. 586-590
• 
  Stephan Kronholz, Silvia Karthäuser, A. van der Hart, T. Wandlowski, Rainer Waser:
  Metallic nanogaps with access windows for liquid based systems. 591-594
• 
  Yuan Tian, Hong Wang:
  Temperature dependence of DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors: an analytical study. 595-600
• 
  Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino:
  Evaluation of graded-channel SOI MOSFET operation at high temperatures. 601-607
• 
  Kah-Yoong Chan, Teck-Yong Tou, Bee-San Teo:
  Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique. 608-612
• 
  Weida Hu, Xiaoshuang Chen, Xuchang Zhou, Zhijue Quan, Wei Lu:
  Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study. 613-619
• 
  Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
  A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. 620-626
• 
  Giuseppe de Vita, F. Bellatalla, Giuseppe Iannaccone:
  Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders. 627-629
• 
  Jean-François Eloy, Michel Depeyrot:
  Nanometer range: A new theoretical challenge for microelectronics and optoelectronics. 630-634
• 
  A. Benfdila, Francis Balestra:
  On the drain current saturation in short channel MOSFETs. 635-641
• 
  R. Kinder, A. Vincze, M. Kuruc, R. Srnánek, B. Lojek, B. Sopko, D. Chren:
  Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer. 642-645
• 
  Emmanuel M. Drakakis:
  Systematic derivation of explicit design formulae for log-domain: A 3rd-order lowpass example. 646-656
• 
  Clóves G. Rodrigues:
  Electron mobility in n-doped zinc sulphide. 657-660
• 
  Zhilin Sun, Weifeng Sun, Longxing Shi:
  A review of safe operation area. 661-667

Volume 37, Number 8, August 2006

• 
  Amara Amara, Frédéric Amiel, Thomas Ea:
  FPGA vs. ASIC for low power applications. 669-677
• 
  Shao-You Deng, Chang-Han Wu, Joseph Ya-min Lee:
  Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors. 678-680
• 
  Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
  Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. 681-685
• 
  C. Persson, C. L. Dong, Lionel Vayssieres, Andreas Augustsson, T. Schmitt, Maurizio Mattesini, Rajeev Ahuja, J. Nordgren, Ching-Lin Chang, A. Ferreira da Silva:
  X-ray absorption and emission spectroscopy of ZnO nanoparticle and highly oriented ZnO microrod arrays. 686-689
• 
  H. Dakhlaoui, S. Jaziri:
  Spin-dependent transmission of holes in III-V diluted magnetic semiconductor based heterostructure. 690-694
• 
  Biswajit Das, Christopher Garman:
  Capacitance-voltage characterization of thin film nanoporous alumina templates. 695-699
• 
  Aiguang Ren, Xiaomin Ren, Qi Wang, Deping Xiong, Hui Huang, Yongqing Huang:
  Heteroepitaxy of In_0.53Ga_0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications. 700-704
• 
  Rashed Adnan Islam, Y. C. Chan, W. Jillek, Samia Islam:
  Comparative study of wetting behavior and mechanical properties (microhardness) of Sn-Zn and Sn-Pb solders. 705-713
• 
  Su Zhan, Xie Ying-ge, Li Xia, Yu Tao:
  Organic light-emitting devices with a 2-(4-biphenyl)-5-(4-butylphenyl)-1, 3, 4-oxadiazole layer between the alpha-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum. 714-717
• 
  Abel García, Volodymyr Grimalsky, Edmundo Gutiérrez:
  Two-dimensional simulations of amplification of space charge waves in a strained Si/SiGe heterostructure at 77K. 718-721
• 
  Te-Hua Fang, Win-Jin Chang, Jun-Wei Chiu:
  Study on coalescent properties of ZnO nanoclusters using molecular dynamics simulation and experiment. 722-727
• 
  Janusz Zarebski, Krzysztof Górecki:
  The electrothermal macromodel of voltage mode PWM controllers for SPICE. 728-734
• 
  S. Shrestha, Chandan Kumar Sarkar:
  Comparative studies on electronic transport due to the reduced dimensionality at the heterojunctions of GaAs/A1_xGa_(1-x)As and Ga_xIn_(1-x)As/InP systems at low temperatures. 735-741
• 
  Haiyan Gao, Guiguang Xiong, Xiaobo Feng:
  Quantum-confined Stark shift in electroreflectance of a cylindrical GaN quantum dot. 742-745
• 
  Yung-Kuang Yang, Tsun-Ching Chang:
  Experimental analysis and optimization of a photo resist coating process for photolithography in wafer fabrication. 746-751
• 
  A. Albina, P. L. Taberna, J. P. Cambronne, P. Simon, E. Flahaut, Thierry Lebey:
  Impact of the surface roughness on the electrical capacitance. 752-758
• 
  Yang-Kuao Kuo, Chuen-Guang Chao:
  Control ability of spin coating planarization of resist filmand optimal control of developers. 759-764
• 
  Kanishka Biswas, Soumen K. Das, S. Kal:
  Analysis and prevention of convex corner undercutting in bulk micromachined silicon microstructures. 765-769
• 
  Alessandro Caronti, Giosuè Caliano, Riccardo Carotenuto, Alessandro Savoia, Massimo Pappalardo, Elena Cianci, Vittorio Foglietti:
  Capacitive micromachined ultrasonic transducer (CMUT) arrays for medical imaging. 770-777
• 
  Sangsik Park, Hyungsoo Uh, Soeun Park:
  Low voltage CCD image sensor with optimized reset operation. 778-782
• 
  Lotfi Beji, Ali Missaoui, Afif Fouzri, Hafedh Ben Ouada, Hichem Maaref, Abdelaziz Bouazizi:
  Nanostructurale nature of the porous GaAs layer formed on p⁺-GaAs substrate by electrochemical anodization. 783-785
• 
  P. De:
  Epitaxial layer induced series resistance and microwave properties of N⁺NP⁺ Si X band impatt diodes. 786-791
• 
  Shoou-Jinn Chang, Hao-Sheng Hou, Yan-Kuin Su:
  Automated synthesis of passive filter circuits including parasitic effects by genetic programming. 792-799
• 
  Heng-Ming Hsu:
  Investigation on the layout parameters of on-chip inductor. 800-803
• 
  C. Lochot, Jean-Philippe Lainé, Marise Bafleur, A. Cazarré, J. Tasselli:
  Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's. 804-811
• 
  Zhiyu Liu, Volkan Kursun:
  Sleep switch dual threshold voltage domino logic with reduced subthreshold and gate oxide leakage current. 812-820
• 
  Rui Tang, Fengming Zhang, Yong-Bin Kim:
  Design metal-dot based QCA circuits using SPICE model. 821-827
• 
  Long Bu, John A. Chandy:
  A CAM-based keyword match processor architecture. 828-836
• 
  Maria C. Tanese, Daniel Fine, Ananth Dodabalapur, Luisa Torsi:
  Organic thin-film transistor sensors: Interface dependent and gate bias enhanced responses. 837-840
• 
  Feifei Liao, Yiqing Ding, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bomy Chen:
  Characterization of Ge₂Sb₂Te₅ thin film transistor and its application in non-volatile memory. 841-844
• 
  Abdelkader Saïdane:
  M. Razeghi and M. Henini, Editors, Optoelectronic Devices: III-Nitrides, ELSEVIER, Oxford, UK (2005) hardbound, 592 p, ISBN 0-08-044426-1, GBP120. 845

Volume 37, Number 9, September 2006

• 
  Chunxia Wang, Guiguang Xiong:
  Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots. 847-850
• 
  Ndubuisi Ekekwe, Ralph Etienne-Cummings:
  Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies. 851-860
• 
  Yufeng Guo, Zhaoji Li, Bo Zhang:
  A new analytical model for optimizing SOI LDMOS with step doped drift region. 861-866
• 
  Chung-Fon Hsieh, Shyankay Jou:
  Titanium nitride electrodes for micro-gap discharge. 867-870
• 
  D. S. Liu, M. K. Shih:
  Experimental method and FE simulation model for evaluation of wafer probing parameters. 871-883
• 
  C. M. Joseph, T. Natsume, Masakazu Nakamura, Masaaki Iizuka, Kazuhiro Kudo:
  Device preparation and characterization of drain current transients in static induction micro transistors. 884-887
• 
  P. Strichovanec, R. Kúdela, I. Vávra, Jozef Novák:
  Characterization of QWIP structures prepared on GaAs-patterned substrates. 888-891
• 
  L. Bouzaïene, N. Imbarek, Laarbi Sfaxi, Hichem Maaref:
  GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D-2D InGaAs/GaAs resonant tunneling devices. 892-896
• 
  Ali Rostami:
  Generalized Fibonacci quasi photonic crystals and generation of superimposed Bragg Gratings for optical communication. 897-903
• 
  Shaohua Gong, Duanzheng Yao, Xiaobo Feng, Hongliang Jiang:
  Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot. 904-909
• 
  Gady Golan, Alex Axelevitch, B. Gorenstein, V. Manevych:
  Hot-Probe method for evaluation of impurities concentration in semiconductors. 910-915
• 
  Fangcong Wang, Su Liu, Jianlin Zhou, Shuo Sun, Bingli Qi, Guping Ou:
  Bright green organic light-emitting devices having a composite electron transport layer. 916-918
• 
  Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta:
  An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability. 919-929
• 
  Kah-Yoong Chan, Teck-Yong Tou, Bee-San Teo:
  Effects of substrate temperature on electrical and structural properties of copper thin films. 930-937
• 
  Mohmmad T. Alam, S. K. Islam:
  A modified model for Si/SiGe MOS-gate delta-doped HEMTs. 938-942
• 
  Cristian Ravariu, Adrian Rusu, Florina Ravariu:
  Interface electric charge modelling and characterization with delta - distribution generator strings in thin SOI films. 943-947
• 
  Dong-Ming Fang, Xi-Ning Wang, Yong Zhou, Xiao-Lin Zhao:
  Fabrication and performance of a micromachined 3-D solenoid inductor. 948-951
• 
  L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys:
  The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. 952-957
• 
  Hua Li, Tianquan Lü, Punan Sun, Zelong He, Haitao Yin:
  Transport through a quantum-dot-ring with one dot connected to two electron reservoirs. 958-962
• 
  Ashok K. Goel, T. H. Tan:
  High-temperature and self-heating effects in fully depleted SOI MOSFETs. 963-975
• 
  Ali Rostami:
  Low threshold and tunable all-optical switch using two-photon absorption in array of nonlinear ring resonators coupled to MZI. 976-981
• 
  Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen:
  Electronic properties of GST for non-volatile memory. 982-984
• 
  Yi-Ju Chen, Monuko du Plessis:
  An integrated 0.35mum CMOS optical receiver with clock and data recovery circuit. 985-992
• 
  Soon-Il Kwon, Sung-Won You, Young-Soo Sohn, Yong-Soo Cho, Byung-Nam Park, Sie-Young Choi:
  Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process. 993-996
• 
  Ilham Hassoune, François Macé, Denis Flandre, Jean-Didier Legat:
  Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks. 997-1006
• 
  Boon Kuan Chung:
  Q-based design method for T network impedance matching. 1007-1011
• 
  Marco Pifferi, Mattia Borgarino, R. Codeluppi, Federico Alimenti:
  High linearity CMOS mixer for domotic 5GHz WLAN sliding-IF receivers. 1012-1017
• 
  Bharath Kumar Thandri, José Silva-Martínez:
  An overview of feed-forward design techniques for high-gain wideband operational transconductance amplifiers. 1018-1029

Volume 37, Number 10, October 2006

• 
  Malek Madani, H. Colder, X. Portier, K. Zellama, R. Rizk, H. Bouchriha:
  Influence of hydrogen dilution and substrate temperature on growth of nanocrystalline hydrogenated silicon carbide films deposited by RF sputtering. 1031-1035
• 
  Cheng Luo, Fang Meng, Anand Francis:
  Fabrication and application of silicon-reinforced PDMS masters. 1036-1046
• 
  Hyuck In Kwon, Umberto Ravaioli:
  Simulation of electronic/ionic mixed conduction in solid ionic memory devices. 1047-1051
• 
  Xia Xiao, XueYi You, Suying Yao:
  Theoretical study of mechanical properties of multi-layer ULSI interconnect dielectrics by surface acoustic wave method. 1052-1055
• 
  Jonathan E. Greenspan:
  A large-scale parametric study of InP deposition on patterned substrates. 1056-1063
• 
  Kah-Yoong Chan, Bee-San Teo:
  Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique. 1064-1071
• 
  Giuseppe de Vita, Giuseppe Iannaccone:
  Ultra-low-power temperature compensated voltage reference generator. 1072-1079
• 
  R. Al Asmar, J.-P. Atanas, Y. Zaatar, J. Podlecki, A. Foucaran:
  Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga₂O₃) thin alloys by reactive electron-beam co-evaporation technique. 1080-1085
• 
  Giuseppe Di Cataldo, Rosario Mita, Salvatore Pennisi:
  High-speed CMOS unity-gain current amplifier. 1086-1091
• 
  Rosario Mita, Gaetano Palumbo, Pier Giorgio Fallica:
  A fast driver circuit for single-photon sensors. 1092-1096
• 
  Hassan Hassan, Mohab Anis, Mohamed I. Elmasry:
  Low-power multi-threshold MCML: Analysis, design, and variability. 1097-1104
• 
  Wen-Yaw Chung, Yeong-Tsair Lin, Dorota G. Pijanowska, Chung-Huang Yang, Ming-Chia Wang, Alfred Krzyskow, Wladyslaw Torbicz:
  New ISFET interface circuit design with temperature compensation. 1105-1114
• 
  Hariyadi Soetedjo, S. Ezrol Esham, Idris Sabtu, Y. Mohd Razman, A. M. Abdul Fatah:
  Changes of electrical properties by Al content of Al_xGa_1-xAs in pHEMT structures as observed using HRXRD. 1115-1118
• 
  Françis Calmon, Cristian Andrei, Olivier Valorge, José-Cruz Nuñez Pérez, Jacques Verdier, Christian Gontrand:
  Impact of low-frequency substrate disturbances on a 4.5GHz VCO. 1119-1127
• 
  Davide Baderna, Alessandro Cabrini, Marco Pasotti, Guido Torelli:
  Power efficiency evaluation in Dickson and voltage doubler charge pump topologies. 1128-1135
• 
  Kambiz K. Moez, Mohamed I. Elmasry:
  Lumped-element analysis and design of CMOS distributed amplifiers with image impedance termination. 1136-1145

Volume 37, Number 11, November 2006

Special Issue: Therminic 2004 (International Workshop on Thermal Investigations of ICs and Systems) Sophia Antipolis, 29 September - 1 October 2004

• 
  Márta Rencz:
  Foreword: Thermal investigations of integrated circuits and systems at THERMINIC'04. 1147
• 
  Sanjiv Sinha, Kenneth E. Goodson:
  Thermal conduction in sub-100nm transistors. 1148-1157
• 
  S. Launay, Andrei G. Fedorov, Y. Joshi, A. Cao, P. M. Ajayan:
  Hybrid micro-nano structured thermal interfaces for pool boiling heat transfer enhancement. 1158-1164
• 
  Suresh V. Garimella:
  Advances in mesoscale thermal management technologies for microelectronics. 1165-1185

Special Issue: ICM 2004 (International Conference on Microelectronics), Tunis, Tunisia, December 6-8, 2004

• 
  Mohamed Ibrahim El Masry, Mohamed Masmoudi:
  Editorial. 1186-1187
• 
  Mounir Hanine, M. Masmoudi:
  A reliable guideline to maximize the detection and analysis of deep level defects: Comparison between DLTS analysis techniques. 1188-1193
• 
  Alexander Fox, K. E. Ehwald, Peter Schley, Rainer Barth, Steffen Marschmeyer, C. Wolf, V. E. Stikanov, A. Gromovyy, A. Hudyryev:
  Cost-effective integration of an FN-programmed embedded flash memory into a 0.25mum SiGe: C RF-BiCMOS technology. 1194-1199
• 
  Rabeb Mizouni, Sofiène Tahar, Paul Curzon:
  Hybrid verification integrating HOL theorem proving with MDG model checking. 1200-1207
• 
  Hedi Tmar, Jean-Philippe Diguet, Abdenour Azzedine, Mohamed Abid, Jean Luc Philippe:
  RTDT: A static QoS manager, RT scheduling, HW/SW partitioning CAD tool. 1208-1219
• 
  Jan Doutreloigne:
  A monolithic low-power high-voltage driver for bistable LCDs. 1220-1230
• 
  Kamal El-Sankary, Mohamad Sawan:
  High-resolution background calibrated ADCs for software-defined radios. 1231-1240
• 
  Andrea Mazzanti, Francesco Svelto:
  CMOS injection locked oscillators for quadrature generation at radio-frequency. 1241-1250
• 
  Thierry Taris, Jean-Baptiste Bégueret, Hervé Lapuyade, Yann Deval:
  RF CMOS body-effect circuits. 1251-1260

Regular Papers

• 
  Regiane Ragi, Murilo Araújo Romero:
  I-V characteristics of Schottky contacts based on quantum wires. 1261-1264
• 
  Edson J. Carvalho, Marco Antonio Robert Alves, Edmundo S. Braga, Lucila Cescato:
  SiO₂ single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. 1265-1270
• 
  Huishan Yang, Yi Zhao, Jingying Hou, Shiyong Liu:
  Organic light-emitting devices with double-block layer. 1271-1275
• 
  Doumit Zaouk, Youssef Zaatar, R. Al Asmar, Jihane Jabbour:
  Piezoelectric zinc oxide by electrostatic spray pyrolysis. 1276-1279
• 
  Hua-Bin Fang, Jing-Quan Liu, Zheng-Yi Xu, Lu Dong, Li Wang, Di Chen, Bing-Chu Cai, Yue Liu:
  Fabrication and performance of MEMS-based piezoelectric power generator for vibration energy harvesting. 1280-1284
• 
  A. H. You, P. L. Cheang:
  Current impulse response of thin InP p⁺-i-n⁺ diodes. 1285-1288
• 
  Nabil Safta, Houcine Mejri, Hafedh Belmabrouk, M. A. Zaïdi:
  Effects of high doping on the bandgap bowing for Al_xGa_1-xN. 1289-1292
• 
  Jinwen Zhu, Tim LaFave, Raphael Tsu:
  Classical capacitance of few-electron dielectric spheres. 1293-1296
• 
  Cuiping Jia, Wei Dong, Caixia Liu, Xindong Zhang, Jingran Zhou, Zhicheng Zhong, Hailin Xue, Huidong Zang, Baokun Xu, Weiyou Chen:
  Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon. 1297-1301
• 
  S. A. Kanade, Vijaya Puri:
  Study of thick film Ni_(1-x)Co_xMn₂O₄, (0<=x<=1) using overlay technique on thick film microstrip ring resonator. 1302-1305
• 
  Anirban Chakraborty, Cheng Luo:
  Fabrication and application of metallic nano-cantilevers. 1306-1312
• 
  Nikolaos P. Papadopoulos, Alkis A. Hatzopoulos, Dimitris K. Papakostas, C. A. Dimitriadis, Stilianos Siskos:
  Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region. 1313-1320
• 
  Fariel Shafee:
  Information in entangled dynamic quantum networks. 1321-1324
• 
  Fuxiang Wei, Xiaobo Zhang, Jin Cao, M. A. Khan, Wenqing Zhu, Xueyin Jiang, Zhilin Zhang:
  Enhancement of red organic light-emitting diodes via cascade energy transfer. 1325-1328
• 
  Subhadeep Kal, A. Bagolini, Benno Margesin, M. Zen:
  Stress and resistivity analysis of electrodeposited gold films for MEMS application. 1329-1334
• 
  Chin C. Lee, Winnie V. Chen, Jeong H. Park:
  A new I-V model for light-emitting devices with a quantum well. 1335-1338
• 
  Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta:
  An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. 1339-1346
• 
  Chong Lei, Yong Zhou, Xiao-Yu Gao, Wen Ding, Ying Cao, Zhi-Min Zhou, Hyung Choi:
  Fabrication of 3D MEMS toroidal microinductor for high temperature application. 1347-1351
• 
  L. Magafas, John A. Kalomiros, D. Bandekas, G. Tsirigotis:
  Optimization of the electrical properties of Al/a-SiC: H Schottky diodes by means of thermal annealing of a-SiC: H thin films. 1352-1357
• 
  Xiu-Xia Zhang, Chang-Chun Zhu:
  Field-emission lighting tube with CNT film cathode. 1358-1360
• 
  Xiaofei Chen, Xuecheng Zou, Shuang-Xi Lin, Kai Yu:
  A 1.25 Gbps DC-coupled laser diode driver with V_BE compensation technique. 1361-1365
• 
  Hans Norström, Ted Johansson:
  Formation of a buried collector layer in RF-bipolar devices by ion implantation. 1366-1371
• 
  D. Noonan, Patrick J. McNally, Weimin Chen, Aapo Lankinen, L. Knuuttila, Turkka O. Tuomi, Andreas N. Danilewsky, Rolf Simon:
  The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography. 1372-1378
• 
  Xiao-Feng Sun, Gui-Fu Ding, Dong-Hua Gu, Bin-Hong Li, Min-Yi Shen:
  Design and fabrication of a new micromachined interdigital coplanar waveguide. 1379-1383
• 
  Antonella Arena, Nicola Donato, Giovanni Pioggia, G. Rizzo, Gaetano Saitta:
  Preparation and optical characterization of photosensitive multilayered structures based on polythiophenes and tetracyanoquinodimethane. 1384-1388
• 
  Alexander Satka, J. Liday, R. Srnánek, A. Vincze, Daniel Donoval, Jaroslav Kovác, Marián Veselý, Miroslav Michalka:
  Characterisation of titanium disilicide thin films. 1389-1395
• 
  Xingfang Liu, Guosheng Sun, J. M. Li, J. Ning, M. C. Luo, Lei Wang, W. S. Zhao, Yiping Zeng:
  Visible blind p⁺-π-n^--n⁺ ultraviolet photodetectors based on 4H-SiC homoepilayers. 1396-1398
• 
  Nabil Sghaier, M'Hamed Trabelsi, Ne. Sghaier, Liviu Militaru, Abdelkader Souifi, Adel Kalboussi, Noureddine Yacoubi:
  Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. 1399-1403
• 
  R. Ajjel, Hichem Maaref:
  Electrical properties of GaAs-Al_0.46Ga_0.54As superlattice within a wider quantum well. 1404-1407
• 
  C. X. Xia, S. Y. Wei:
  Quantum size effect on excitons in zinc-blende GaN/AlN quantum dot. 1408-1411
• 
  Baoyong Chi, Xiaolei Zhu, Ziqiang Wang, Zhihua Wang:
  New implementation of injection locked technique and its application to low phase noise quadrature oscillators. 1412-1418
• 
  Boon Kuan Chung:
  Variability analysis of impedance matching network. 1419-1423

Volume 37, Number 12, December 2006

Special Issue: Sixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006)

• 
  Mohamed Henini:
  Sixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006). 1425-1426
• 
  V. Mlinar, François M. Peeters:
  Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field. 1427-1429
• 
  Jesse Groenen, F. Poinsotte, A. Zwick, A. Mlayah:
  When sound meets quantum dots. 1430-1435
• 
  Paola Atkinson, S. P. Bremner, D. Anderson, G. A. C. Jones, David A. Ritchie:
  Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates. 1436-1439
• 
  Irene D'Amico:
  Quantum dot-based quantum buses for quantum computer hardware architecture. 1440-1441
• 
  Javier Miguel-Sánchez, Álvaro de Guzmán, José María Ulloa, Miguel Montes, Adrián Hierro, Elías Muñoz:
  MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B. 1442-1445
• 
  J. Ng, Mohamed Missous:
  Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3mum applications. 1446-1450
• 
  V. A. Shchukin, Nikolai N. Ledentsov, I. P. Soshnikov, N. V. Kryzhanovskaya, M. V. Maximov, N. D. Zakharov, P. Werner, Dieter Bimberg:
  Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices. 1451-1460
• 
  Sanguan Anantathanasarn, Richard Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, Tjibbe de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans:
  Wavelength controlled InAs/InP quantum dots for telecom laser applications. 1461-1467
• 
  Jo Shien Ng, H. Y. Liu, M. J. Steer, Mark Hopkinson, J. P. R. David:
  Photoluminescence beyond 1.5mum from InAs quantum dots. 1468-1470
• 
  Armando Rastelli, Mathieu Stoffel, G. Katsaros, J. Tersoff, U. Denker, T. Merdzhanova, Gouri Sankar Kar, Giovanni Costantini, K. Kern, H. von Känel:
  Reading the footprints of strained islands. 1471-1476
• 
  Antti Tukiainen, J. Viheriälä, Tapio Niemi, T. Rytkönen, J. Kontio, M. Pessa:
  Selective growth experiments on gallium arsenide (100) surfaces patterned using UV-nanoimprint lithography. 1477-1480
• 
  Theodore I. Kamins, Amir A. Yasseri, Shashank Sharma, R. Fabian W. Pease, Qiangfei Xia, Stephen Y. Chou:
  Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering. 1481-1485
• 
  R. T. Harley, O. Z. Karimov, Mohamed Henini:
  Spin dynamics in (110)-oriented quantum wells. 1486-1489
• 
  W. Limmer, M. Glunk, J. Daeubler, T. Hummel, W. Schoch, C. Bihler, Hans Huebl, Martin S. Brandt, S. T. B. Goennenwein, Rolf Sauer:
  Magnetic anisotropy in (Ga, Mn)As on GaAs(113)As studied by magnetotransport and ferromagnetic resonance. 1490-1492
• 
  Patrick Fisher, Oleg Maksimov, Hui Du, Volker D. Heydemann, Marek Skowronski, Paul A. Salvador:
  Growth, structure, and morphology of TiO₂ films deposited by molecular beam epitaxy in pure ozone ambients. 1493-1497
• 
  Shiro Tsukamoto, G. R. Bell, Yasuhiko Arakawa:
  Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber. 1498-1504
• 
  J. C. Lin, P. W. Fry, Richard A. Hogg, Mark Hopkinson, Ian Mark Ross, A. G. Cullis, R. S. Kolodka, A. I. Tartakovskii, M. S. Skolnick:
  The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface. 1505-1510
• 
  Li-Chang Chou, Yu-Ru Lin, Cheng-Tien Wan, Hao-Hsiung Lin:
  [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy. 1511-1514
• 
  Jozef Novák, P. Strichovanec, I. Vávra, R. Kúdela, Michal Kucera:
  Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces. 1515-1518
• 
  Raphael Tsu, D. Quinlan, K. Daneshvar:
  Silicon-O-M-O-silicon superlattice. 1519-1522
• 
  Jooyoung Lee, Mao-Nan Chang, Kang L. Wang:
  Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO₂ patterned Si template. 1523-1527
• 
  Mathieu Stoffel, Armando Rastelli, T. Merdzhanova, Gouri Sankar Kar, Oliver G. Schmidt:
  Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands. 1528-1531
• 
  M. Schramboeck, Aaron Maxwell Andrews, T. Roch, Werner Schrenk, Alois Lugstein, Gottfried Strasser:
  Nano-patterning and growth of self-assembled quantum dots. 1532-1534
• 
  W. Limmer, J. Daeubler, M. Glunk, T. Hummel, W. Schoch, Rolf Sauer:
  (Ga, Mn)As on patterned GaAs(001) substrates: Growth and magnetotransport. 1535-1537
• 
  Gady Golan, Alex Axelevitch, B. Gorenstein:
  Si-C multilayer quasi crystals preparation by DC magnetron sputtering. 1538-1542
• 
  Dagmar Gregusová, Peter Eliás, Z. Öszi, Róbert Kúdela, Ján Soltýs, Ján Fedor, Vladimír Cambel, Ivan Kostic:
  Technology and properties of a vector hall sensor. 1543-1546
• 
  Raquel Gargallo, Javier Miguel-Sánchez, A. Guzmán, U. Jahn, E. Muñoz:
  Self-organized GaAs patterns on misoriented GaAs (111)B substrates using dilute nitrides by molecular beam epitaxy. 1547-1551
• 
  Javier Miguel-Sánchez, A. Guzmán, U. Jahn, E. Luna, Elías Muñoz:
  Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs. 1552-1556
• 
  V. A. Volodin, M. D. Efremov:
  Photoluminescence study of type-II GaAs quantum well wires grown on nano-faced (311)A surface: Quasi-1D exciton observation? 1557-1560

Special Issue: IWASI 2005 (International Workshop on Advances in Sensors and Interfaces), Bari, Italy, 19-20 April 2005

• 
  Daniela De Venuto:
  Editorial. 1561-1562
• 
  Kris Baert, Bert Gyselinckx, Tom Torfs, Vladimir Leonov, Refet Firat Yazicioglu, Steven Brebels, Stéphane Donnay, J. Vanfletern, M. Pastreen, Eric Beyne, Chris Van Hoof:
  Technologies for highly miniaturized autonomous sensor networks. 1563-1568
• 
  Maher Kayal, Marc Pastre:
  Automatic calibration of Hall sensor microsystems. 1569-1575
• 
  Marija Blagojevic, Maher Kayal, Daniela De Venuto:
  FD SOI Hall sensor electronics interfaces for energy measurement. 1576-1583
• 
  Eugenio Cantatore, Martin Ouwerkerk:
  Energy scavenging and power management in networks of autonomous microsensors. 1584-1590
• 
  Salvador Mir, Libor Rufer, Achraf Dhayni:
  Built-in-self-test techniques for MEMS. 1591-1597
• 
  Luigi Stebel, M. Tommasi, Sergio Carrato, Giuseppe Cautero, Marco Petasecca, G. Pignatel, Cristoforo Marzocca, Arturo Tauro, Angelo Dragone, Francesco Corsi:
  Development of a prototype detector for use in scintimammography imaging. 1598-1609
• 
  Daniela De Venuto, Bruno Riccò:
  Design and characterization of novel read-out systems for a capacitive DNA sensor. 1610-1619
• 
  Nicola Cioffi, L. Traversa, Nicoletta Ditaranto, Antonietta M. Taurino, M. Epifani, Pietro Siciliano, T. Bleve-Zacheo, Luigia Sabbatini, Luisa Torsi, P. G. Zambonin:
  Core-shell Pd nanoparticles embedded in SnO_x films. Synthesis, analytical characterisation and perspective application in chemiresistor-type sensing devices. 1620-1628
• 
  Claudio Piemonte, Alexander Rashevsky, Andrea Vacchi:
  Device simulation of the ALICE silicon drift detector. 1629-1638
• 
  Luca Benini, Elisabetta Farella, Carlotta Guiducci:
  Wireless sensor networks: Enabling technology for ambient intelligence. 1639-1649